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The Monte Carlo method for semi-classical charge transport in semiconductor devices

Author

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  • Kosina, H.
  • Nedjalkov, M.

Abstract

A brief review of the semi-classical Monte Carlo method for semiconductor device simulation is given, covering the standard Monte Carlo algorithms, variance reduction techniques, the self-consistent solution, and the physical semiconductor model including band structure and scattering mechanisms. The link between physically-based Monte Carlo methods and the numerical method of Monte Carlo integration is considered. The integral representations and the conjugate equations are presented for the transient and the steady-state Boltzmann equation. From these equations the standard algorithms as well as a variety of new algorithms can be derived in a formal way.

Suggested Citation

  • Kosina, H. & Nedjalkov, M., 2001. "The Monte Carlo method for semi-classical charge transport in semiconductor devices," Mathematics and Computers in Simulation (MATCOM), Elsevier, vol. 55(1), pages 93-102.
    • Handle: RePEc:eee:matcom:v:55:y:2001:i:1:p:93-102
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