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A model for the simulation of a two MOS-transistor inverter

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  • Ferguson, R.S.
  • Sprevak, D.

Abstract

Using a physical model to represent the response of a MOS transistor, observations of the output voltage of a two-transitor inverter circuit are generated. The simulated observations are used to assemble a data base from which a statistical model for the inverter is constructed. This statistical model generates the distribution of the output of the inverter with greater efficiency than the physical model and thus it enables the simulation of complex multi-inverter circuits.

Suggested Citation

  • Ferguson, R.S. & Sprevak, D., 1983. "A model for the simulation of a two MOS-transistor inverter," Mathematics and Computers in Simulation (MATCOM), Elsevier, vol. 25(3), pages 249-258.
    • Handle: RePEc:eee:matcom:v:25:y:1983:i:3:p:249-258
    DOI: 10.1016/0378-4754(83)90101-5
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    References listed on IDEAS

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    1. R. C. H. Cheng & G. M. Feast, 1979. "Some Simple Gamma Variate Generators," Journal of the Royal Statistical Society Series C, Royal Statistical Society, vol. 28(3), pages 290-295, November.
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