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Simulation and optimization of a tandem solar cell based on InGaN

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  • Boudaoud, Chahrazad
  • Hamdoune, Abdelkader
  • Allam, Zehor

Abstract

The present paper indicates a numerical simulation to optimize the photovoltaic characteristics of an InGaN tandem solar cell. The cell is composed of two sub-cells p-InxGa1−xN/i-InxGa1−xN/n-InxGa1−xN with indium fraction (x) of 0.05 and 0.15, using sun AM1.5 illumination and SILVACO software for the simulation. The results show that there is an increase in the conversion efficiency compared to that of single-junction p-InxGa1−xN/i-InxGa1−xN/n-InxGa1−xN cells. We have also simulated the effect of p-doping in the top-cell, the indium composition, and the intrinsic layer thickness; on the characteristics of the tandem solar cell. We have reached a conversion efficiency of 3.71% for an intrinsic layer thickness of 0.1 μm and p-doping of 1018 cm−3 in the top cell.

Suggested Citation

  • Boudaoud, Chahrazad & Hamdoune, Abdelkader & Allam, Zehor, 2020. "Simulation and optimization of a tandem solar cell based on InGaN," Mathematics and Computers in Simulation (MATCOM), Elsevier, vol. 167(C), pages 194-201.
    • Handle: RePEc:eee:matcom:v:167:y:2020:i:c:p:194-201
    DOI: 10.1016/j.matcom.2018.09.007
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    Keywords

    GaN; InN; InGaN; Tandem solar cells;
    All these keywords.

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