IDEAS home Printed from https://ideas.repec.org/a/eee/chsofr/v142y2021ics096007792030850x.html
   My bibliography  Save this article

Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure

Author

Listed:
  • Gismatulin, A.A.
  • Orlov, Oleg M.
  • Gritsenko, V.A.
  • Krasnikov, G.Ya.

Abstract

Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using the low-pressure chemical vapor deposition at 700° C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about 3 orders of magnitude. In our work, the charge transport of high and low resistive states in a metal-nitride-oxide-silicon memristor is analyzed with two contact-limited models and six bulk-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling model, Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, Shklovskii-Efros percolation model, Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of metal-nitride-oxide-silicon memristor. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps.

Suggested Citation

  • Gismatulin, A.A. & Orlov, Oleg M. & Gritsenko, V.A. & Krasnikov, G.Ya., 2021. "Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure," Chaos, Solitons & Fractals, Elsevier, vol. 142(C).
    • Handle: RePEc:eee:chsofr:v:142:y:2021:i:c:s096007792030850x
    DOI: 10.1016/j.chaos.2020.110458
    as

    Download full text from publisher

    File URL: http://www.sciencedirect.com/science/article/pii/S096007792030850X
    Download Restriction: Full text for ScienceDirect subscribers only
    File URL: https://libkey.io/10.1016/j.chaos.2020.110458?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:eee:chsofr:v:142:y:2021:i:c:s096007792030850x. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Thayer, Thomas R. (email available below). General contact details of provider: https://www.journals.elsevier.com/chaos-solitons-and-fractals .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.