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Effect of grain size on the thermoelectric conversion efficiency of semiconductor alloys at high temperature

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  • Rowe, D. M.
  • Bhandari, C. M.

Abstract

The theoretical increase in the thermoelectric figure of merit of silicon-germanium alloy at 1000 K which would accompany a reduction in material grain size is calculated. Assuming that acoustic phonon scattering is the dominant scattering mechanism, the improvement in the conversion efficiency compared with single crystal values is estimated to be 14 per cent and 30 per cent for n-type Si80Ge20 alloy with grain sizes of 10 [mu]m and 0·1 [mu]m, respectively.

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  • Rowe, D. M. & Bhandari, C. M., 1980. "Effect of grain size on the thermoelectric conversion efficiency of semiconductor alloys at high temperature," Applied Energy, Elsevier, vol. 6(5), pages 347-351, September.
    • Handle: RePEc:eee:appene:v:6:y:1980:i:5:p:347-351
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    Cited by:

    1. Bruce Cook, 2022. "Silicon–Germanium: The Legacy Lives On," Energies, MDPI, vol. 15(8), pages 1-16, April.

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