Bridging efficiency and scalability: A systematic evaluation of diamond wire sawn silicon wafer texturing technologies for high-performance photovoltaics

The global transition towards sustainable energy has positioned photovoltaic (PV) technology, particularly crystalline silicon (c-Si) solar cells, dominating approximately 97 % of the overall PV market, driven by dual imperatives: cost reduction and efficiency enhancement. This review paper critically analyzes cutting-edge texturing technologies for c-Si wafers, a crucial step in achieving these objectives. We begin by examining the shift from conventional loose abrasive slurry sawing (LASS) to diamond wire sawing (DWS), which offers superior productivity, reduced kerf loss, and enables the production of thinner wafers. The paper then delves into various texturing methods, including vapor etching, reactive ion etching (RIE), laser etching, acid etching, alkali etching, and metal-assisted chemical etching (MACE), evaluating their efficacy in creating optimal light-trapping structures on silicon surfaces. Our comprehensive analysis reveals that while traditional wet etching methods remain prevalent, novel approaches such as MACE and RIE show particular promise for future high-efficiency solar cells. The inverted pyramid structure, achievable through MACE, emerges as a leading contender for optimizing light capture and cell performance. This review provides a state-of-the-art overview of texturing technologies and insights into the future of c-Si solar cells, paving the way for high-efficiency, cost-effective photovoltaic devices.