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Full band Monte Carlo simulation - beyond the semiclassical approach

Author

Listed:
  • Nilsson Hans-Erik

    (Department of Information Technology and Media, Mid-Sweden University, SE-851 70 Sundsvall, Sweden)

  • Martinez Antonio

    (Solid State Electronics, Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden)

  • Hjelm Mats

    (Department of Information Technology and Media, Mid-Sweden University, SE-851 70 Sundsvall, Sweden)

Abstract

A quantum mechanical extension of the full band ensemble Monte Carlo (MC) simulation method is presented. The new approach goes beyond the traditional semi-classical method generally used in MC simulations of charge transport in semiconductor materials and devices. The extension is necessary in high-field simulations of semiconductor materials with a complex unit cell, such as the hexagonal SiC polytypes or wurtzite GaN. Instead of complex unit cells the approach can also be used for super-cells, in order to understand charge transport at surfaces, around point defects, or in quantum wells.

Suggested Citation

  • Nilsson Hans-Erik & Martinez Antonio & Hjelm Mats, 2004. "Full band Monte Carlo simulation - beyond the semiclassical approach," Monte Carlo Methods and Applications, De Gruyter, vol. 10(3-4), pages 481-490, December.
    • Handle: RePEc:bpj:mcmeap:v:10:y:2004:i:3-4:p:481-490:n:30
    DOI: 10.1515/mcma.2004.10.3-4.481
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