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A Study of The Hole Barrier of Kanthal on Silicon Using Current – Voltage Characteristics

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  • S. P. Kashinje

    (St. Joseph University in Tanzania, College of Engineering and Technology (SJCET), P. O. Box 11007, Dar Es Salaam, TANZANIA)

Abstract

We report fabrication of a kanthal pSi diode and a study of its hole barrier by Current – Voltage characteristics. The diode fabrication was done by sputter-depositing a kanthal film on a single crystalline p – type Si in the orientation. Kanthal is a metal alloy consisting of 70.6% Iron, 24.1% Chromium, 4.8% Aluminum and 0. 5% Co. The hole barrier on kanthal was determined by I – V characteristics to be ФBh=0.66±0.03 eV. The Rutherford Back Scattering Analysis shows that the composition of the sputtered kanthal films and the parent target are the same.

Suggested Citation

  • S. P. Kashinje, 2023. "A Study of The Hole Barrier of Kanthal on Silicon Using Current – Voltage Characteristics," International Journal of Research and Scientific Innovation, International Journal of Research and Scientific Innovation (IJRSI), vol. 8(4), pages 55-61, April.
    • Handle: RePEc:bjc:journl:v:8:y:2023:i:4:p:55-61
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