Author
Listed:
- S. Chick
(Advanced Technology Institute and SEPNet, University of Surrey)
- N. Stavrias
(Radboud University, Institute for Molecules and Materials, FELIX Laboratory)
- K. Saeedi
(Radboud University, Institute for Molecules and Materials, FELIX Laboratory)
- B. Redlich
(Radboud University, Institute for Molecules and Materials, FELIX Laboratory)
- P. T. Greenland
(University College London)
- G. Matmon
(University College London)
- M. Naftaly
(National Physical Laboratory, TQEM)
- C. R. Pidgeon
(Institute of Photonics and Quantum Science, SUPA, Heriot Watt University)
- G. Aeppli
(Laboratory for Solid State Physics, ETH Zurich
Institut de Physique, EPF Lausanne
Swiss Light Source, Paul Scherrer Institut)
- B. N. Murdin
(Advanced Technology Institute and SEPNet, University of Surrey)
Abstract
Superposition of orbital eigenstates is crucial to quantum technology utilizing atoms, such as atomic clocks and quantum computers, and control over the interaction between atoms and their neighbours is an essential ingredient for both gating and readout. The simplest coherent wavefunction control uses a two-eigenstate admixture, but more control over the spatial distribution of the wavefunction can be obtained by increasing the number of states in the wavepacket. Here we demonstrate THz laser pulse control of Si:P orbitals using multiple orbital state admixtures, observing beat patterns produced by Zeeman splitting. The beats are an observable signature of the ability to control the path of the electron, which implies we can now control the strength and duration of the interaction of the atom with different neighbours. This could simplify surface code networks which require spatially controlled interaction between atoms, and we propose an architecture that might take advantage of this.
Suggested Citation
S. Chick & N. Stavrias & K. Saeedi & B. Redlich & P. T. Greenland & G. Matmon & M. Naftaly & C. R. Pidgeon & G. Aeppli & B. N. Murdin, 2017.
"Coherent superpositions of three states for phosphorous donors in silicon prepared using THz radiation,"
Nature Communications, Nature, vol. 8(1), pages 1-9, December.
Handle:
RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms16038
DOI: 10.1038/ncomms16038
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