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Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

Author

Listed:
  • Cedric Rolin

    (IMEC, Large Area Electronics)

  • Enpu Kang

    (IMEC, Large Area Electronics)

  • Jeong-Hwan Lee

    (IMEC, Large Area Electronics)

  • Gustaaf Borghs

    (KU Leuven)

  • Paul Heremans

    (IMEC, Large Area Electronics
    KU Leuven)

  • Jan Genoe

    (IMEC, Large Area Electronics
    KU Leuven)

Abstract

Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects.

Suggested Citation

  • Cedric Rolin & Enpu Kang & Jeong-Hwan Lee & Gustaaf Borghs & Paul Heremans & Jan Genoe, 2017. "Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method," Nature Communications, Nature, vol. 8(1), pages 1-9, April.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms14975
    DOI: 10.1038/ncomms14975
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