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Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Author

Listed:
  • Juwon Lee

    (University of Oxford)

  • Sangyeon Pak

    (University of Oxford)

  • Young-Woo Lee

    (University of Oxford)

  • Yuljae Cho

    (University of Oxford)

  • John Hong

    (University of Oxford)

  • Paul Giraud

    (University of Oxford)

  • Hyeon Suk Shin

    (Ulsan National Institute of Science and Technology (UNIST))

  • Stephen M. Morris

    (University of Oxford)

  • Jung Inn Sohn

    (University of Oxford)

  • SeungNam Cha

    (University of Oxford)

  • Jong Min Kim

    (University of Oxford)

Abstract

Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (

Suggested Citation

  • Juwon Lee & Sangyeon Pak & Young-Woo Lee & Yuljae Cho & John Hong & Paul Giraud & Hyeon Suk Shin & Stephen M. Morris & Jung Inn Sohn & SeungNam Cha & Jong Min Kim, 2017. "Monolayer optical memory cells based on artificial trap-mediated charge storage and release," Nature Communications, Nature, vol. 8(1), pages 1-8, April.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms14734
    DOI: 10.1038/ncomms14734
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