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Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

Author

Listed:
  • Han-Chun Wu

    (School of Physics, Beijing Institute of Technology)

  • Alexander N. Chaika

    (School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin
    Institute of Solid State Physics of Russian Academy of Sciences)

  • Ming-Chien Hsu

    (National Taiwan University)

  • Tsung-Wei Huang

    (National Taiwan University)

  • Mourad Abid

    (School of Physics, Beijing Institute of Technology)

  • Mohamed Abid

    (School of Physics, Beijing Institute of Technology)

  • Victor Yu Aristov

    (Institute of Solid State Physics of Russian Academy of Sciences
    Deutsches Elektronen-Synchrotron DESY
    Institut für Experimentelle Physik, TU Bergakademie Freiberg)

  • Olga V. Molodtsova

    (Deutsches Elektronen-Synchrotron DESY
    National Research University of Information Technologies, Mechanics and Optics)

  • Sergey V. Babenkov

    (Deutsches Elektronen-Synchrotron DESY)

  • Yuran Niu

    (MAX-lab, Lund University)

  • Barry E. Murphy

    (School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin)

  • Sergey A. Krasnikov

    (School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin)

  • Olaf Lübben

    (School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin)

  • Huajun Liu

    (Institute of Plasma Physics, Chinese Academy of Sciences)

  • Byong Sun Chun

    (Korea Research Institute of Standards and Science)

  • Yahya T. Janabi

    (Saudi Aramco Materials Performance Unit TSD, Research and Development Center)

  • Sergei N. Molotkov

    (Institute of Solid State Physics of Russian Academy of Sciences)

  • Igor V. Shvets

    (School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin)

  • Alexander I. Lichtenstein

    (Institut für Theoretische Physik, Universität Hamburg
    Ural Federal University)

  • Mikhail I. Katsnelson

    (Ural Federal University
    Institute for Molecules and Materials, Radboud University)

  • Ching-Ray Chang

    (National Taiwan University)

Abstract

Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin–orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.

Suggested Citation

  • Han-Chun Wu & Alexander N. Chaika & Ming-Chien Hsu & Tsung-Wei Huang & Mourad Abid & Mohamed Abid & Victor Yu Aristov & Olga V. Molodtsova & Sergey V. Babenkov & Yuran Niu & Barry E. Murphy & Sergey A, 2017. "Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene," Nature Communications, Nature, vol. 8(1), pages 1-9, April.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms14453
    DOI: 10.1038/ncomms14453
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