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Disorder enabled band structure engineering of a topological insulator surface

Author

Listed:
  • Yishuai Xu

    (New York University)

  • Janet Chiu

    (New York University)

  • Lin Miao

    (New York University
    Advanced Light Source, Lawrence Berkeley National Laboratory)

  • Haowei He

    (New York University)

  • Zhanybek Alpichshev

    (Massachusetts Institute of Technology
    Stanford University)

  • A. Kapitulnik

    (Stanford University)

  • Rudro R. Biswas

    (Purdue University)

  • L. Andrew Wray

    (New York University
    NYU-ECNU Institute of Physics at NYU Shanghai)

Abstract

Three-dimensional topological insulators are bulk insulators with Z2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.

Suggested Citation

  • Yishuai Xu & Janet Chiu & Lin Miao & Haowei He & Zhanybek Alpichshev & A. Kapitulnik & Rudro R. Biswas & L. Andrew Wray, 2017. "Disorder enabled band structure engineering of a topological insulator surface," Nature Communications, Nature, vol. 8(1), pages 1-7, April.
  • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms14081
    DOI: 10.1038/ncomms14081
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